SQJ401

SQJ401EP-T1_GE3 vs SQJ401EP-T1-GE3 vs SQJ401EP-T1

 
PartNumberSQJ401EP-T1_GE3SQJ401EP-T1-GE3SQJ401EP-T1
DescriptionMOSFET P-Channel 12V AEC-Q101 QualifiedRF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET
ManufacturerVishayVISHAY-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8L-4--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current32 A--
Rds On Drain Source Resistance5 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge164 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation83 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSQ--
Transistor Type1 P-Channel--
Width5.13 mm--
BrandVishay / Siliconix--
Forward Transconductance Min60 S--
Fall Time166 ns--
Product TypeMOSFET--
Rise Time63 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time263 ns--
Typical Turn On Delay Time43 ns--
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ401EP-T1_GE3 MOSFET P-Channel 12V AEC-Q101 Qualified
SQJ401EP-T2_GE3 MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3
SQJ401EP-T1-GE3 RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET
SQJ401EP-T1 New and Original
SQJ401EPT1GE3 Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay
Vishay
SQJ401EP-T1_GE3 MOSFET P-CH 12V 32A POWERPAKSO-8
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