 | |  | |
| PartNumber | SQJ402EP-T1_GE3 | SQJ402EP-T1-GE3 | SQJ402EP |
| Description | MOSFET 100V 32A 27watt AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 | |
| Manufacturer | Vishay | Vishay | Vishay / Siliconix |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 32 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 34 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 6.15 mm | 6.15 mm | - |
| Series | SQ | SQ | SQ Series |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.13 mm | 5.13 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 54 S | - | - |
| Fall Time | 7 ns | - | 7 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | - | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | - | 27 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Package Case | - | - | SO-8L-4 |
| Pd Power Dissipation | - | - | 83 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 32 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 11 mOhms |
| Qg Gate Charge | - | - | 34 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ402EP-T1_GE3 | MOSFET 100V 32A 27watt AEC-Q101 Qualified | |
| SQJ402EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 | ||
| SQJ402EP-T1-GE3 | IGBT Transistors MOSFET 100V 32A 27watt N-CH Automotive | ||
| SQJ402EP | New and Original | ||
| SQJ402EPT1GE3 | Power Field-Effect Transisto | ||
Vishay |
SQJ402EP-T1_GE3 | MOSFET N-CH 100V POWERPAK SO8L |