 | | | |
| PartNumber | SQJ410EP-T1_GE3 | SQJ412EP-T1_GE3 | SQJ412EP-T1-GE3 |
| Description | MOSFET N-Channel 30V AEC-Q101 Qualified | MOSFET 40V 32A 83W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 40 V | - |
| Id Continuous Drain Current | 32 A | 32 A | - |
| Rds On Drain Source Resistance | 3.5 mOhms | 3.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 110 nC | 120 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 83 W | 83 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 6.15 mm | 6.15 mm | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.13 mm | 5.13 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 9 ns | 55 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 150 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 50 ns | - |
| Typical Turn On Delay Time | 15 ns | 45 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| RoHS | - | Y | Y |
| Forward Transconductance Min | - | 85 S | - |
| Part # Aliases | - | - | SQJ412EP-GE3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ415EP-T1_GE3 | MOSFET -40V Vds; +/-20V Vgs PowerPAK SO-8L | |
| SQJ414EP-T1_GE3 | MOSFET Dual N-Ch 30V AEC-Q101 Qualified | ||
| SQJ410EP-T1_GE3 | MOSFET N-Channel 30V AEC-Q101 Qualified | ||
| SQJ418EP-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ412EP-T1_GE3 | MOSFET 40V 32A 83W AEC-Q101 Qualified | ||
| SQJ416EP-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ418EP-T2_GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L | ||
| SQJ412EP-T2_GE3 | MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3 | ||
| SQJ412EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3 | ||
| SQJ412EP-T1-GE3 | IGBT Transistors MOSFET 40V 32A 83W N-Ch Automotive | ||
| SQJ410EP-T1-GE3 | RF Bipolar Transistors MOSFET N-Channel 30V Automotive MOSFET | ||
| SQJ411EP | New and Original | ||
| SQJ414EP | New and Original | ||
| SQJ418EP | New and Original | ||
Vishay |
SQJ412EP-T1_GE3 | MOSFET N-CH 40V 32A PPAK SO-8 | |
| SQJ410EP-T1_GE3 | MOSFET N-CH 30V 32A POWERPAKSO-8 | ||
| SQJ414EP-T1_GE3 | MOSFET N-CH 30V 30A POWERPAKSOL |