SQJ412EP-T2_GE3

SQJ412EP-T2_GE3
Mfr. #:
SQJ412EP-T2_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SQJ412EP-T2_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SQJ412EP-T2_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
32 A
Rds On - Drain-Source Resistance:
4.1 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
120 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Packaging:
Reel
Series:
SQ
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
85 S
Fall Time:
55 ns
Product Type:
MOSFET
Rise Time:
150 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
50 ns
Typical Turn-On Delay Time:
45 ns
Tags
SQJ412, SQJ41, SQJ4, SQJ
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Image Part # Description
SQJ412EP-T1_GE3

Mfr.#: SQJ412EP-T1_GE3

OMO.#: OMO-SQJ412EP-T1-GE3-C09

MOSFET 40V 32A 83W AEC-Q101 Qualified
SQJ412EP-T2_GE3

Mfr.#: SQJ412EP-T2_GE3

OMO.#: OMO-SQJ412EP-T2-GE3

MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
SQJ412EP-T1-GE3

Mfr.#: SQJ412EP-T1-GE3

OMO.#: OMO-SQJ412EP-T1-GE3-5EF

MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3
SQJ412EP-T1-GE3

Mfr.#: SQJ412EP-T1-GE3

OMO.#: OMO-SQJ412EP-T1-GE3-126

IGBT Transistors MOSFET 40V 32A 83W N-Ch Automotive
SQJ412EP-T1_GE3

Mfr.#: SQJ412EP-T1_GE3

OMO.#: OMO-SQJ412EP-T1-GE3-VISHAY

MOSFET N-CH 40V 32A PPAK SO-8
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of SQJ412EP-T2_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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