SQJ412

SQJ412EP-T1_GE3 vs SQJ412EP-T2_GE3 vs SQJ412EP-T1-GE3

 
PartNumberSQJ412EP-T1_GE3SQJ412EP-T2_GE3SQJ412EP-T1-GE3
DescriptionMOSFET 40V 32A 83W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8L-4PowerPAK SO-8PowerPAK-SO-8L-4
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current32 A32 A-
Rds On Drain Source Resistance3.5 mOhms4.1 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge120 nC120 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height1.04 mm--
Length6.15 mm--
SeriesSQSQSQ
Transistor Type1 N-Channel1 N-Channel-
Width5.13 mm--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min85 S85 S-
Fall Time55 ns55 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time150 ns150 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time50 ns50 ns-
Typical Turn On Delay Time45 ns45 ns-
Unit Weight0.017870 oz-0.017870 oz
Part # Aliases--SQJ412EP-GE3
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ412EP-T1_GE3 MOSFET 40V 32A 83W AEC-Q101 Qualified
SQJ412EP-T2_GE3 MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
SQJ412EP-T1-GE3 MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3
SQJ412EP-T1-GE3 IGBT Transistors MOSFET 40V 32A 83W N-Ch Automotive
Vishay
Vishay
SQJ412EP-T1_GE3 MOSFET N-CH 40V 32A PPAK SO-8
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