PartNumber | SQJ476EP-T1_GE3 | SQJ474EP-T1_GE3 | SQJ474EP-T2_GE3 |
Description | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 23 A | 26 A | 26 A |
Rds On Drain Source Resistance | 30 mOhms | 22 mOhms | 30 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 20 nC | 30 nC | 30 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 45 W | 45 W | 45 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | 1.04 mm | - |
Length | 6.15 mm | 6.15 mm | - |
Series | SQ | SQ | SQ |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.13 mm | 5.13 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 22 S | 28 S | 28 S |
Fall Time | 50 ns | 40 ns | 40 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 20 ns | 20 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 11 ns | 18 ns | 18 ns |
Typical Turn On Delay Time | 5 ns | 5 ns | 5 ns |
Unit Weight | 0.017870 oz | 0.017870 oz | - |