SQJ474EP-T2_GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

26 A

Rds On - Drain-Source Resistance:

30 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

30 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

45 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Series:

SQ

Transistor Type:

1 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

28 S

Fall Time:

40 ns

Product Type:

MOSFET

Rise Time:

20 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18 ns

Typical Turn-On Delay Time:

5 ns

Tags

SQJ47, SQJ4, SQJ