SQJ858AEP-T

SQJ858AEP-T1_GE3 vs SQJ858AEP-T1-GE3 vs SQJ858AEP-T1-G

 
PartNumberSQJ858AEP-T1_GE3SQJ858AEP-T1-GE3SQJ858AEP-T1-G
DescriptionMOSFET 40V 58A 48W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4PowerPAK-SO-8L-4-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current58 A--
Rds On Drain Source Resistance5 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation48 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min99 S--
Fall Time8 ns--
Product TypeMOSFETMOSFET-
Rise Time9 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.017870 oz0.017870 oz-
Height-1.04 mm-
Length-6.15 mm-
Width-5.13 mm-
Part # Aliases-SQJ848AEP-T1-GE3-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ858AEP-T1_GE3 MOSFET 40V 58A 48W AEC-Q101 Qualified
SQJ858AEP-T1-GE3 MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3
SQJ858AEP-T1-G New and Original
SQJ858AEP-T1-GE3 N-CHANNEL 40-V (D-S) 175C MOSF
Vishay
Vishay
SQJ858AEP-T1_GE3 MOSFET N-CH 40V 58A
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