SQJ951

SQJ951EP-T1_GE3 vs SQJ951EP vs SQJ951EP-T1-GE3

 
PartNumberSQJ951EP-T1_GE3SQJ951EPSQJ951EP-T1-GE3
DescriptionMOSFET Dual P-Channel 30V AEC-Q101 QualifiedTrans MOSFET P-CH 30V 30A Automotive 8-Pin PowerPAK SO T/R
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8L-4--
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance14 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation56 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFETTrenchFET-
PackagingReelTape & Reel (TR)-
SeriesSQAutomotive, AEC-Q101, TrenchFETR-
Transistor Type2 P-Channel2 P-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min18 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.017870 oz--
Package Case-PowerPAKR SO-8 Dual-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PowerPAKR SO-8 Dual-
FET Type-2 P-Channel (Dual)-
Power Max-56W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-1680pF @ 10V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-30A-
Rds On Max Id Vgs-17 mOhm @ 7.5A, 10V-
Vgs th Max Id-2.5V @ 250μA-
Gate Charge Qg Vgs-50nC @ 10V-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ951EP-T1_GE3 MOSFET Dual P-Channel 30V AEC-Q101 Qualified
Vishay
Vishay
SQJ951EP-T1_GE3 MOSFET 2P-CH 30V 30A PPAK
SQJ951EP New and Original
SQJ951EP-T1-GE3 Trans MOSFET P-CH 30V 30A Automotive 8-Pin PowerPAK SO T/R
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