 |  | | |
| PartNumber | SQJ960EP-T1_GE3 | SQJ960EP | SQJ960EP-T1-GE3 |
| Description | MOSFET 60V 8A 34W AEC-Q101 Qualified | N-CHANNEL 60V PPAK SO-8L | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 30 mOhms, 30 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 20 nC, 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 34 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 16 S, 16 S | - | - |
| Fall Time | 7 ns, 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns, 8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns, 19 ns | - | - |
| Typical Turn On Delay Time | 6 ns, 6 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ960EP-T1_GE3 | MOSFET 60V 8A 34W AEC-Q101 Qualified | |
| SQJ960EP-T1_GE3-CUT TAPE | New and Original | ||
| SQJ960EP | New and Original | ||
| SQJ960EP-T1-GE3 | N-CHANNEL 60V PPAK SO-8L | ||
Vishay |
SQJ960EP-T1_GE3 | MOSFET 2N-CH 60V 8A |