SQJ960EP-T1_GE3

Mfr. #:: SQJ960EP-T1_GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 60V 8A 34W AEC-Q101 Qualified
Lifecycle:: New from this manufacturer.
Datasheet:: SQJ960EP-T1_GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SQJ960EP-T1_GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8L-4

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 8 A

Rds On - Drain-Source Resistance:: 30 mOhms, 30 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 20 nC, 20 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 34 W

Configuration:: Dual

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: TrenchFET

Packaging:: Reel

Series:: SQ

Transistor Type:: 2 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 16 S, 16 S

Fall Time:: 7 ns, 7 ns

Product Type:: MOSFET

Rise Time:: 8 ns, 8 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 19 ns, 19 ns

Typical Turn-On Delay Time:: 6 ns, 6 ns

Unit Weight:: 0.017870 oz

Tags: SQJ960EP-T, SQJ960, SQJ96, SQJ9, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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SQJ960EP-T1_GE3 Description

***ure Electronics: Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L

***ical: Trans MOSFET N-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R

***nell: MOSFET, N-CH, 60V, 8A, POWERPAKSO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 34W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C

***emi: N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ

***ure Electronics: N-Channel 60 V 35 mOhm SMT PowerTrench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***ure Electronics: N-Channel 60 V 0.04 Ohms Surface Mount Power Mosfet - SOIC-8

***p One Stop: Trans MOSFET N-CH 60V 7A Automotive 8-Pin SOIC N T/R

***nell: MOSFET, N-CH, 60V, 7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:4W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited

***(Formerly Allied Electronics): SI4436DY-T1-GE3 N-channel MOSFET Transistor; 8 A; 60 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 60 V 0.036 Ohms Surface Mount Power Mosfet - SOIC-8

***p One Stop: Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R

***ark: N Channel Mosfet, 60V, 8A, Soic, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,DIODE,60V,8A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.1A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): SI4946BEY-T1-GE3 Dual N-channel MOSFET Transistor; 6.5 A; 60 V; 8-Pin SOIC

***et Europe: Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R

***ure Electronics: DUAL N-CH MOSFET SO-8 60V 41MOHM @ 10V 175C- LEAD(PB) AND HALOGEN FREE

***enic: 60V 6.5A 2.4W 41m´Î@10V5.3A 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:60V; On Resistance

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***el Electronic: Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~175°C TJ 41m Ω @ 5.3A, 10V 3V @ 250μA MOSFET 2N-CH 60V 6.5A 8-SOIC

***nell: MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 3.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***emi: N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ

***ure Electronics: N-Channel 60 V 14 mOhm SMT PowerTrench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 60V 10A 8-Pin SOIC N T/R - Tape and Reel

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***eco: Transistor MOSFET Negative Channel 60 Volt 8A 8-Pin SOIC N T/R

***emi: N-Channel PowerTrenchTM MOSFET, 60V, 8A, 20mΩ

*** Source Electronics: Trans MOSFET N-CH 60V 8A 8-Pin SOIC T/R / MOSFET N-CH 60V 8A 8-SO

***ure Electronics: N-Channel 60 V 20 mOhm PowerTrench Mosfet SOIC-8

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):0.02ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8A; Current Id Max:8A; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Pulse Current Idm N Channel 2:50A; SMD Marking:FDS5680; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:4V

SQJ960EP-T1_GE3 More Information

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Part #	Mfg.	Description	Stock	Price
SQJ960EP-T1-GE3 DISTI # V36:1790_09219221	Vishay Intertechnologies	N-CHANNEL 60V PPAK SO-8L RoHS: Compliant	0	3000000:$0.8686 1500000:$0.8687 300000:$0.8808 30000:$0.8999 3000:$0.9030
SQJ960EP-T1_GE3 DISTI # SQJ960EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 60V 8A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	905In Stock	1000:$0.9989 500:$1.2056 100:$1.4674 10:$1.8260 1:$2.0300
SQJ960EP-T1_GE3 DISTI # SQJ960EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 8A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	905In Stock	1000:$0.9989 500:$1.2056 100:$1.4674 10:$1.8260 1:$2.0300
SQJ960EP-T1_GE3 DISTI # SQJ960EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 8A RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$0.8695 3000:$0.9030
SQJ960EP-T1_GE3 DISTI # SQJ960EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK SO T/R (Alt: SQJ960EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	30000:€0.7529 18000:€0.7869 12000:€0.8899 6000:€1.0979 3000:€1.5309
SQJ960EP-T1_GE3 DISTI # SQJ960EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ960EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQJ960EP-T1_GE3 DISTI # SQJ960EP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ960EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQJ960EP-T1_GE3 DISTI # 76Y1553	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) 175C MOSFE	0	10000:$0.7970 6000:$0.8290 4000:$0.8600 2000:$0.9560 1000:$1.0100 1:$1.0700
SQJ960EP-T1_GE3 DISTI # 78-SQJ960EP-T1_GE3	Vishay Intertechnologies	MOSFET 60V 8A 34W AEC-Q101 Qualified RoHS: Compliant	4454	1:$1.9700 10:$1.6400 100:$1.2700 500:$1.1100 1000:$0.9230 3000:$0.8590 6000:$0.8280
SQJ960EP-T1-GE3 DISTI # 78-SQJ960EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ960EP-T1_GE3 RoHS: Compliant	0
SQJ960EP-T1_GE3 DISTI # 7879418P	Vishay Intertechnologies	MOSFET DUAL N-CH 60V 8A POWERPAK SO8, RL	3080	25:£0.5340
SQJ960EP-T1_GE3 DISTI # XSKDRABV0027383	Vishay Intertechnologies	Telecom Circuit, 1-Func RoHS: Compliant	9000 in Stock0 on Order	9000:$1.0500 3000:$1.1300
SQJ960EP-T1-GE3 DISTI # 2364125	Vishay Intertechnologies	MOSFET, N-CH, 60V, 8A, POWERPAKSO-8 RoHS: Compliant	0	9000:$1.3100 3000:$1.3500 1000:$1.4000 500:$1.5100 250:$1.7400 100:$2.0100 10:$2.5300 1:$3.1300

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SQJ960EP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes