 |  | | |
| PartNumber | SQJ968EP-T1_GE3 | SQJ968EP | SQJ968EP-T1-GE3 |
| Description | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | DUAL N-CHANNEL 60-V (D-S) 175C | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 23.5 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms, 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18.5 nC, 18.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 16 S, 16 S | - | - |
| Fall Time | 6.5 ns, 6.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns, 9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19.5 ns, 19.5 ns | - | - |
| Typical Turn On Delay Time | 8 ns, 8 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ968EP-T1_GE3 | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | |
| SQJ968EP | New and Original | ||
| SQJ968EP-T1-GE3 | DUAL N-CHANNEL 60-V (D-S) 175C | ||
| SQJ968EPT1GE3 | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Vishay |
SQJ968EP-T1_GE3 | MOSFET 2 N-CH 60V POWERPAK SO8 |