SQJ968EP-T1_GE3

SQJ968EP-T1_GE3
Mfr. #:
SQJ968EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Dual N-Channel 60V AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Datasheet:
SQJ968EP-T1_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ968EP-T1_GE3 DatasheetSQJ968EP-T1_GE3 Datasheet (P4-P6)SQJ968EP-T1_GE3 Datasheet (P7-P9)SQJ968EP-T1_GE3 Datasheet (P10-P12)
ECAD Model:
More Information:
SQJ968EP-T1_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8L-4
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
23.5 A
Rds On - Drain-Source Resistance:
28 mOhms, 28 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
18.5 nC, 18.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
42 W
Configuration:
Dual
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Packaging:
Reel
Series:
SQ
Transistor Type:
2 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
16 S, 16 S
Fall Time:
6.5 ns, 6.5 ns
Product Type:
MOSFET
Rise Time:
9 ns, 9 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
19.5 ns, 19.5 ns
Typical Turn-On Delay Time:
8 ns, 8 ns
Unit Weight:
0.017870 oz
Tags
SQJ968, SQJ96, SQJ9, SQJ
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***n
    A***n
    RU

    Did not reach

    2019-03-23
    J***o
    J***o
    US

    Fast

    2019-01-11
    M***v
    M***v
    RU

    All working. Packed was good. Thank you very much to the seller!

    2019-01-12
***ark
Mosfet Transistor, Dual N Channel, 18 A, 60 V, 0.028 Ohm, 10 V, 2 V
***ment14 APAC
MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8
***ronik
DUAL 60V 18A 37mOhm PPSO-8L RoHSconf
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Part # Mfg. Description Stock Price
SQJ968EP-T1-GE3
DISTI # V36:1790_14140430
Vishay IntertechnologiesDUAL N-CHANNEL 60-V (D-S) 175C0
  • 3000000:$0.3927
  • 1500000:$0.3952
  • 300000:$0.6026
  • 30000:$0.9606
  • 3000:$1.0200
SQJ968EP-T1_GE3
DISTI # SQJ968EP-T1_GE3CT-ND
Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1964In Stock
  • 1000:$0.4672
  • 500:$0.5918
  • 100:$0.7164
  • 10:$0.9190
  • 1:$1.0300
SQJ968EP-T1_GE3
DISTI # SQJ968EP-T1_GE3TR-ND
Vishay SiliconixMOSFET 2 N-CH 60V POWERPAK SO8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.3871
  • 6000:$0.4022
  • 3000:$0.4234
SQJ968EP-T1_GE3
DISTI # SQJ968EP-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 18A 8-Pin SO T/R (Alt: SQJ968EP-T1_GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 12000
  • 30000:€0.3949
  • 18000:€0.4129
  • 12000:€0.4669
  • 6000:€0.5759
  • 3000:€0.8029
SQJ968EP-T1_GE3
DISTI # SQJ968EP-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 18A 8-Pin SO T/R - Tape and Reel (Alt: SQJ968EP-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3689
  • 18000:$0.3789
  • 12000:$0.3899
  • 6000:$0.4059
  • 3000:$0.4189
SQJ968EP-T1_GE3
DISTI # 78-SQJ968EP-T1_GE3
Vishay IntertechnologiesMOSFET Dual N-Channel 60V AEC-Q101 Qualified
RoHS: Compliant
4840
  • 1:$1.1300
  • 10:$1.0000
  • 100:$0.7980
  • 500:$0.6180
  • 1000:$0.4880
  • 3000:$0.4420
  • 6000:$0.4200
  • 9000:$0.4050
SQJ968EP-T1-GE3
DISTI # 2400405
Vishay IntertechnologiesMOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8
RoHS: Compliant
0
  • 9000:$0.8530
  • 3000:$0.8820
  • 1000:$0.9140
  • 500:$0.9840
  • 250:$1.1400
  • 100:$1.3100
  • 10:$1.6500
  • 1:$2.0500
SQJ968EP-T1-GE3
DISTI # 2400405
Vishay IntertechnologiesMOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8
RoHS: Compliant
363
  • 500:£0.4880
  • 250:£0.5590
  • 100:£0.6300
  • 10:£0.8530
  • 1:£1.0200
SQJ968EP-T1_GE3
DISTI # XSKDRABV0027385
Vishay Intertechnologies 
RoHS: Compliant
9000 in Stock0 on Order
  • 9000:$0.5520
  • 3000:$0.5914
SQJ968EPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
15000
    SQJ968EP-T1_GE3
    DISTI # TMOS1159
    Vishay IntertechnologiesDual N-CH 60V 33,6mOhm SO-8L
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.4340
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    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of SQJ968EP-T1_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.13
    $1.13
    10
    $1.00
    $10.00
    100
    $0.80
    $79.80
    500
    $0.62
    $309.00
    1000
    $0.49
    $488.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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