 | | |
| PartNumber | SQJQ100E-T1_GE3 | SQJQ100EL-T1_GE3 |
| Description | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-8x8L-4 | PowerPAK-8x8L-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V |
| Id Continuous Drain Current | 160 A | 160 A |
| Rds On Drain Source Resistance | 900 uOhms | 900 uOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 220 nC | 220 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 136 W | 136 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 122 S | 122 S |
| Fall Time | 30 ns | 30 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 60 ns | 60 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 60 ns |
| Typical Turn On Delay Time | 24 ns | 24 ns |
| Height | - | 1.9 mm |
| Length | - | 7.9 mm |
| Width | - | 6.22 mm |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJQ100E-T1_GE3 | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | |
| SQJQ100EL-T1_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
Vishay |
SQJQ100E-T1_GE3 | MOSFET N-CH 40V 200A POWERPAK8 | |
| SQJQ100EL-T1_GE3 | MOSFET N-CH 40V 200A POWERPAK8 | ||
| SQJQ100EL | New and Original |