PartNumber | SQJQ404E-T1_GE3 | SQJQ410EL-T1_GE3 | SQJQ402E-T1_GE3 |
Description | MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | MOSFET N-Channel 40V AEC-Q101 Qualified |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-8x8L-4 | PowerPAK-8x8L-4 | PowerPAK-8x8L-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 100 V | 40 V |
Id Continuous Drain Current | 200 A | 135 A | 200 A |
Rds On Drain Source Resistance | 1.72 mOhms | 2.8 mOhms | 1.3 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | 1.5 V |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 175 nC | 150 nC | 260 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 150 W | 136 W | 150 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 160 S | 84 S | 140 S |
Fall Time | 8 ns | 87 ns | 11 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 23 ns | 40 ns | 15 ns |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 58 ns | 69 ns | 69 ns |
Typical Turn On Delay Time | 22 ns | 19 ns | 19 ns |
Qualification | - | AEC-Q101 | AEC-Q101 |
Tradename | - | TrenchFET | TrenchFET |
Series | - | SQ | SQ |