| PartNumber | SQS415ENW-T1_GE3 | SQS411ENW-T1_GE3 | SQS407ENW-T1_GE3 |
| Description | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8W | PowerPAK-1212-8W | PowerPAK-1212-8W |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 30 V |
| Id Continuous Drain Current | 16 A | 16 A | 16 A |
| Rds On Drain Source Resistance | 16.1 mOhms | 27.3 mOhms | 10.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 82 nC | 50 nC | 77 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 62.5 W | 53.6 W | 62.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 P-Channel TrenchFET Power MOSFET | 1 P-Channel TrenchFET Power MOSFET | 1 P-Channel TrenchFET Power MOSFET |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 30 S | 23 S | 34 S |
| Fall Time | 16 ns | 6.4 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.6 ns | 3 ns | 4 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 64 ns | 39.6 ns | 62 ns |
| Typical Turn On Delay Time | 11.8 ns | 10.5 ns | 11.4 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
|
Vishay / Siliconix |
SQS415ENW-T1_GE3 | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | |
| SQS411ENW-T1_GE3 | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | ||
| SQS407ENW-T1_GE3 | MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W | ||
| SQS460ENW-T1_GE3 | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | ||
| SQS482ENW-T1_GE3 | MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W | ||
| SQS481ENW-T1_GE3 | MOSFET -150V Vds PowerPAK AEC-Q101 Qualified | ||
| SQS484ENW-T1_GE3 | MOSFET N-Channel 40V PowerPAK 1212-8W | ||
| SQS460EN-T1_GE3 | MOSFET 60V 8A 39W AEC-Q101 Qualified | ||
| SQS423EN-T1_GE3 | MOSFET P-Channel 30V AEC-Q101 Qualified | ||
| SQS462EN-T1_GE3 | MOSFET 60V 8A 33W AEC-Q101 Qualified | ||
| SQS482EN-T1_GE3 | MOSFET 30V 16A 62W AEC-Q101 Qualified | ||
| SQS484EN-T1_GE3 | MOSFET 40V 16A 62W AEC-Q101 Qualified | ||
| SQS840EN-T1_GE3 | MOSFET 40V 12A 33W AEC-Q101 Qualified | ||
| SQS420EN-T1_GE3 | MOSFET 20V 8A 18W AEC-Q101 Qualified | ||
| SQS840EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS840EN-T1_GE3 | ||
| SQS462EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS462EN-T1_GE3 | ||
| SQS423EN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQS423EN-T1_GE3 | ||
| SQS482EN-T1-GE3 | MOSFET RECOMMENDED ALT 781-SQS482EN-T1_GE3 | ||
| SQS420EN-T1-GE3 | IGBT Transistors MOSFET 20V 8A 18W TrenchFET | ||
| SQS482EN-T1-GE3 | IGBT Transistors MOSFET 30V 16A 62W TrenchFET | ||
| SQS460EN-T1-GE3 | IGBT Transistors MOSFET 60V 8A 39W | ||
| SQS840EN-T1-GE3 | IGBT Transistors MOSFET 40V 12A 33W | ||
| SQS423EN-T1-GE3 | RF Bipolar Transistors MOSFET P-Channel 30V Automotive MOSFET | ||
| SQS460EN-T1_GE3-CUT TAPE | New and Original | ||
| SQS462EN-T1_GE3-CUT TAPE | New and Original | ||
| SQS410EN-T1-GE3 | New and Original | ||
| SQS430EN-T1-GE3 | New and Original | ||
| SQS460ENT1GE3 | Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQS462EN | New and Original | ||
| SQS462EN-T1-GE3 | N-CHANNEL 60V PPAK 1213 | ||
| SQS464EEN-T1-GE3 | New and Original | ||
| SQS466EEN-T1-GE3 | New and Original | ||
| SQS472EN-T1-GE3 | New and Original | ||
| SQS481ENW-T1-GE3 | New and Original | ||
| SQS484EN-T1-GE3 | Trans MOSFET N-CH 40V 16A Automotive 8-Pin PowerPAK 1212 EP T/R | ||
| SQS484ENT1GE3 | Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQS484ENW-T1-GE3 | New and Original | ||
| SQS704-7R7X | New and Original | ||
| SQS840EN | New and Original | ||
| SQS840ENT1GE3 | Power Field-Effect Transisto | ||
| SQS850EN | New and Original | ||
Vishay |
SQS420EN-T1_GE3 | MOSFET N-CH 20V 8A 1212-8 | |
| SQS482EN-T1_GE3 | MOSFET N-CH 30V 16A 1212-8 | ||
| SQS460EN-T1_GE3 | MOSFET N-CH 60V 8A | ||
| SQS840EN-T1_GE3 | MOSFET N-CH 40V 16A TO263 | ||
| SQS423EN-T1_GE3 | MOSFET P-CH 30V 16A POWERPAK1212 | ||
| SQS462EN-T1_GE3 | MOSFET N-CH 60V 8A 1212-8 | ||
| SQS481ENW-T1_GE3 | MOSFET P-CH 150V 4.7A 1212-8 | ||
| SQS484EN-T1_GE3 | MOSFET N-CH 40V 16A 1212-8 | ||
| SQS484ENW-T1_GE3 | MOSFET N-CH 40V 16A POWERPAK1212 |