| PartNumber | SQS944ENW-T1_GE3 | SQS966ENW-T1_GE3 | SQS850EN-T1_GE3 |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8W | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W | MOSFET N-Channel 60V AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 2 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 60 V | 60 V |
| Id Continuous Drain Current | 6 A | 6 A | 12 A |
| Rds On Drain Source Resistance | 25 mOhms | 36 mOhms | 18 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 0.76 nC | 6.2 nC | 41 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 27.8 W | 27.8 W | 33 W |
| Configuration | Dual | Dual | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 2 N-Channel | 2 N-Channel | 1 N-Channel |
| Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay / Siliconix |
| Forward Transconductance Min | 2.5 S | 2.8 S | 33 S |
| Fall Time | 7 ns | 4.8 ns | 9.3 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.2 ns | 1.7 ns | 9.6 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 14 ns | 25 ns |
| Typical Turn On Delay Time | 7.6 ns | 7.9 ns | 9 ns |
| Qualification | - | - | AEC-Q101 |
| Tradename | - | - | TrenchFET |
| Height | - | - | 1.04 mm |
| Length | - | - | 3.3 mm |
| Series | - | - | SQ |
| Width | - | - | 3.3 mm |