 |  | | |
| PartNumber | SSM3J331R,LF | SSM3J331R | SSM3J331R,LF(T |
| Description | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | ||
| Manufacturer | Toshiba | 30000TOSHIBA | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 10.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SSM3J331 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
SSM3J331R,LF | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | |
| SSM3J331R,LF | IGBT Transistors MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | ||
| SSM3J331R | New and Original | ||
| SSM3J331R,LF(T | New and Original | ||
| SSM3J331RLF | MOSFET MOSFET (LF) TRANS PD=1W F=1MHZ | ||
| SSM3J331R.LFT | New and Original |