 |  | |
| PartNumber | SSM3J331R,LF | SSM3J331R,LF(T |
| Description | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | |
| Manufacturer | Toshiba | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 4 A | - |
| Rds On Drain Source Resistance | 150 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 8 V | - |
| Qg Gate Charge | 10.4 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1 W | - |
| Configuration | Single | - |
| Packaging | Reel | - |
| Height | 0.9 mm | - |
| Length | 2.9 mm | - |
| Series | SSM3J331 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 1.3 mm | - |
| Brand | Toshiba | - |
| Product Type | MOSFET | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Unit Weight | 0.000282 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
SSM3J331R,LF | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | |
| SSM3J331R,LF | IGBT Transistors MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | ||
| SSM3J331R,LF(T | New and Original |