SSM3J338

SSM3J338R,LF vs SSM3J338R vs SSM3J338R,LF(T

 
PartNumberSSM3J338R,LFSSM3J338RSSM3J338R,LF(T
DescriptionMOSFET Small-signal MOSFET Vdss= -12V, ID= -6A
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23F-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance45.3 mOhms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage1.8 V--
Qg Gate Charge19.5 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2.9 mm--
SeriesSSM3J338--
Transistor Type1 P-Channel--
Width1.3 mm--
BrandToshiba--
Forward Transconductance Min17 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time383 ns--
Typical Turn On Delay Time65 ns--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
SSM3J338R,LF MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A
SSM3J338R New and Original
SSM3J338R,LF(T New and Original
Top