 |  | | |
| PartNumber | SSM6N7002BFE,LM | SSM6N7002BFE,LM(B | SSM6N7002BFE,LM(T |
| Description | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ES6-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 200 mA | - | - |
| Rds On Drain Source Resistance | 2.1 Ohms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Series | SSM6N7002 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.2 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
SSM6N7002BFE,LM | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | |
| SSM6N7002BFE,LM | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | ||
| SSM6N7002BFE,LM(B | New and Original | ||
| SSM6N7002BFE,LM(T | New and Original |