 |  | | |
| PartNumber | STB50NE10T4 | STB50NE08 | STB50NE10 |
| Description | MOSFET N-Ch 100 Volt 50 Amp | 50 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 21 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 180 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.6 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STB50NE10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.35 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 35 S | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 100 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STB50NE10T4 | MOSFET N-Ch 100 Volt 50 Amp | |
| STB50NE10T4 | MOSFET N-CH 100V 50A D2PAK | ||
| STB50NE08 | New and Original | ||
| STB50NE10 | 50 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | ||
| STB50NE10L | MOSFET | ||
| STB50NE10L-T4 | New and Original |