PartNumber | STB8N65M5 | STB8NM60D | STB8N90K5 |
Description | MOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A | MOSFET N Ch 600V 0.9Ohm 8A | MOSFET N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 900 V |
Id Continuous Drain Current | 7 A | 8 A | 8 A |
Rds On Drain Source Resistance | 560 mOhms | 1 Ohms | 600 mOhms |
Vgs Gate Source Voltage | 25 V | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 65 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 70 W | 100 W | 130 W |
Configuration | Single | Single | Single |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Reel | Reel | - |
Series | STB8N65M5 | STB8NM60D | STB8N90K5 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.077603 oz |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 4.6 mm | - |
Length | - | 10.4 mm | - |
Width | - | 9.35 mm | - |
Fall Time | - | 8 ns | 13.5 ns |
Rise Time | - | 10 ns | 13.2 ns |
Typical Turn Off Delay Time | - | 26 ns | 36.4 ns |
Typical Turn On Delay Time | - | 13 ns | 14.7 ns |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Qg Gate Charge | - | - | 11 nC |