STD10NM60

STD10NM60N vs STD10NM60ND

 
PartNumberSTD10NM60NSTD10NM60ND
DescriptionMOSFET N-channel 600 V Mdmesh 10AMOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V
Id Continuous Drain Current10 A8 A
Rds On Drain Source Resistance550 mOhms600 mOhms
Vgs Gate Source Voltage25 V25 V
Qg Gate Charge19 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation70 W70 W
ConfigurationSingleSingle
TradenameMDmesh-
PackagingReelReel
SeriesSTD10NM60NSTD10NM60ND
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Fall Time15 ns-
Product TypeMOSFETMOSFET
Rise Time12 ns-
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time32 ns-
Typical Turn On Delay Time10 ns-
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STD10NM60N MOSFET N-channel 600 V Mdmesh 10A
STD10NM60ND MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
STD10NM60N MOSFET N-CH 600V 10A DPAK
STD10NM60ND MOSFET N-CH 600V 8A DPAK
STD10NM60ND-CUT TAPE New and Original
STD10NM60N , MMBT2222A-1 New and Original
STD10NM60N 10NM60N New and Original
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