PartNumber | STD16N65M5 | STD16N65M2 |
Description | MOSFET N-Ch 650 Volt 12 Amp | MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V |
Id Continuous Drain Current | 12 A | 11 A |
Rds On Drain Source Resistance | 270 mOhms | 320 mOhms |
Vgs Gate Source Voltage | 25 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 110 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | MDmesh | - |
Packaging | Reel | Reel |
Series | STD16N65M5 | STD16N65M2 |
Transistor Type | 1 N-Channel | - |
Type | Power MOSFETs | - |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 7 ns | 11.3 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 9 ns | 8.2 ns |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 36 ns |
Typical Turn On Delay Time | 25 ns | 11.3 ns |
Unit Weight | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V |
Qg Gate Charge | - | 19.5 nC |