PartNumber | STFI10LN80K5 | STFI10N62K3 | STFI10N65K3 |
Description | MOSFET POWER MOSFET | RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | MOSFET N-CH 650V 10A I2PAKFP |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220FP-3 | - | - |
Packaging | Tube | Tube | - |
Series | STFI10LN80K5 | N-channel MDmesh | - |
Brand | STMicroelectronics | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 1500 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.068784 oz | - | - |
Package Case | - | I2PAKFP-3 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 30 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 31 ns | - |
Rise Time | - | 15 ns | - |
Vgs Gate Source Voltage | - | 30 V | - |
Id Continuous Drain Current | - | 8.4 A | - |
Vds Drain Source Breakdown Voltage | - | 620 V | - |
Vgs th Gate Source Threshold Voltage | - | 3.75 V | - |
Rds On Drain Source Resistance | - | 680 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 41 ns | - |
Typical Turn On Delay Time | - | 14.5 ns | - |
Qg Gate Charge | - | 42 nC | - |
Channel Mode | - | Enhancement | - |