STFI12N60M2

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

9 A

Rds On - Drain-Source Resistance:

450 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

16 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

25 W

Configuration:

Single

Channel Mode:

Enhancement

Height:

4.6 mm

Length:

10.85 mm

Product:

Power MOSFET

Series:

STFI12N60M2

Transistor Type:

1 N-Channel

Type:

MDmesh M2

Width:

10.4 mm

Brand:

STMicroelectronics

Fall Time:

18 ns

Product Type:

MOSFET

Rise Time:

9.2 ns

Factory Pack Quantity:

1500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

56 ns

Typical Turn-On Delay Time:

9.2 ns

Unit Weight:

0.050717 oz

Tags

STFI1, STFI, STF