STFI11

STFI11N60M2-EP vs STFI11N65M2 vs STFI11NM65N

 
PartNumberSTFI11N60M2-EPSTFI11N65M2STFI11NM65N
DescriptionMOSFETDarlington Transistors MOSFET POWER MOSFETMOSFET N CH 650V 11A I2PAKFP
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-281-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current7.5 A--
Rds On Drain Source Resistance550 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge12.4 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation25 W--
ConfigurationSingle--
Channel ModeEnhancement--
SeriesSTFI11N60M2MDmesh M2-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronics--
Fall Time8 ns15 ns-
Product TypeMOSFET--
Rise Time5.5 ns7.5 ns-
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time9 ns9.5 ns-
Unit Weight0.002822 oz--
Packaging-Tube-
Tradename-MDmesh II Plus-
Package Case-I2PAKFP-3-
Pd Power Dissipation-25 W-
Vgs Gate Source Voltage-25 V-
Id Continuous Drain Current-7 A-
Vds Drain Source Breakdown Voltage-650 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-670 mOhms-
Qg Gate Charge-12.5 nC-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STFI11N60M2-EP MOSFET
STFI11N65M2 Darlington Transistors MOSFET POWER MOSFET
STFI11NM65N MOSFET N CH 650V 11A I2PAKFP
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