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| PartNumber | STGB30V60DF | STGB30V60F |
| Description | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | D2PAK-3 | D2PAK-3 |
| Mounting Style | SMD/SMT | SMD/SMT |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.85 V | 1.85 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 60 A | 60 A |
| Pd Power Dissipation | 258 W | 260 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | STGB30V60DF | STGB30V60F |
| Packaging | Reel | Reel |
| Continuous Collector Current Ic Max | 30 A | 60 A |
| Brand | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | +/- 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.079014 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STGB30V60DF | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed | |
| STGB30V60F | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed | ||
| STGB30V60DF | IGBT Transistors IGBT & Power Bipola | ||
| STGB30V60F | TRENCH GATE FIELD-STOP IGBT, V S | ||
| STGB30V60DF-CUT TAPE | New and Original | ||
| STGB30V60 | New and Original |