STGB6

STGB6M65DF2 vs STGB6NC60HDT4 vs STGB6NC60HD-1

 
PartNumberSTGB6M65DF2STGB6NC60HDT4STGB6NC60HD-1
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low lossIGBT Transistors PowerMESH TM IGBTIGBT Transistors N Ch 6A 600V
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseD2PAK-3D2PAK-3I2PAK-3
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V600 V
Collector Emitter Saturation Voltage1.55 V2.7 V-
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C12 A--
Pd Power Dissipation88 W80 W-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
SeriesSTGB6M65DF2STGB6NC60HDT4STGB6NC60HD
Continuous Collector Current Ic Max12 A15 A15 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current+/- 250 uA100 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity100010001000
SubcategoryIGBTsIGBTsIGBTs
Packaging-ReelTube
Height-4.6 mm9.35 mm
Length-10.4 mm10.4 mm
Width-9.35 mm4.6 mm
Continuous Collector Current-12 A-
Unit Weight-0.079014 oz0.084199 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGB6M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
STGB6NC60HDT4 IGBT Transistors PowerMESH TM IGBT
STGB6NC60HD-1 IGBT Transistors N Ch 6A 600V
STGB6NC60HT4 IGBT Transistors PowerMESH TM IGBT
STGB6NC60HDT4 IGBT 600V 15A 56W D2PAK
STGB6M65DF2 IGBT TRENCH 650V 12A D2PAK
STGB6NC60HD-1 IGBT 600V 15A 56W I2PAK
STGB6NC60HT4 IGBT 600V 15A 56W D2PAK
STGB6NC60 New and Original
STGB6NC60HD New and Original
STGB6NC60HDT4,GB6NC60HD, New and Original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60 New and Original
STGB6NC60HDT4,GB6NC60HD,6NC60,6N60, New and Original
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