PartNumber | STGB6M65DF2 | STGB6NC60HDT4 | STGB6NC60HD-1 |
Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss | IGBT Transistors PowerMESH TM IGBT | IGBT Transistors N Ch 6A 600V |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | D2PAK-3 | D2PAK-3 | I2PAK-3 |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.55 V | 2.7 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 12 A | - | - |
Pd Power Dissipation | 88 W | 80 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Series | STGB6M65DF2 | STGB6NC60HDT4 | STGB6NC60HD |
Continuous Collector Current Ic Max | 12 A | 15 A | 15 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | +/- 250 uA | 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Packaging | - | Reel | Tube |
Height | - | 4.6 mm | 9.35 mm |
Length | - | 10.4 mm | 10.4 mm |
Width | - | 9.35 mm | 4.6 mm |
Continuous Collector Current | - | 12 A | - |
Unit Weight | - | 0.079014 oz | 0.084199 oz |