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| PartNumber | STGD3NB60SDT4 | STGD3NB60SDT4-CUT TAPE | STGD3NB60SD |
| Description | IGBT Transistors N-Ch 600 Volt 3 Amp | ||
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-252-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 6 A | - | - |
| Pd Power Dissipation | 48 W | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | STGD3NB60SD | - | PowerMESH |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Tube |
| Continuous Collector Current Ic Max | 6 A | - | - |
| Height | 2.4 mm | - | - |
| Length | 6.6 mm | - | - |
| Width | 6.2 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Continuous Collector Current | 3 A | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D-Pak |
| Power Max | - | - | 48W |
| Reverse Recovery Time trr | - | - | 1.7μs |
| Current Collector Ic Max | - | - | 6A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 25A |
| Vce on Max Vge Ic | - | - | 1.5V @ 15V, 3A |
| Switching Energy | - | - | 1.1mJ (on), 1.15mJ (off) |
| Gate Charge | - | - | 18nC |
| Td on off 25°C | - | - | 125μs/3.4μs |
| Test Condition | - | - | 480V, 3A, 1 kOhm, 15V |