STGP10NB6

STGP10NB60SD vs STGP10NB60S vs STGP10NB60SFP

 
PartNumberSTGP10NB60SDSTGP10NB60SSTGP10NB60SFP
DescriptionIGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESHIGBT Transistors N-Ch 600 Volt 10 AmpIGBT 600V 23A 25W TO220
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-220-3TO-220-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Maximum Gate Emitter Voltage20 V20 V-
Pd Power Dissipation3.5 W80 W-
Minimum Operating Temperature- 65 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGP10NB60SDSTGP10NB60SPowerMESH
PackagingTubeTubeTube
Continuous Collector Current Ic Max20 A20 A-
Height9.15 mm9.15 mm-
Length10.4 mm10.4 mm-
Width4.6 mm4.6 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity10001000-
SubcategoryIGBTsIGBTs-
Unit Weight0.211644 oz0.211644 oz-
Collector Emitter Saturation Voltage-1.7 V-
Continuous Collector Current at 25 C-20 A-
Continuous Collector Current-10 A-
Gate Emitter Leakage Current-+/- 100 nA-
Package Case--TO-220-3 Full Pack
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220FP
Power Max--25W
Reverse Recovery Time trr---
Current Collector Ic Max--23A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--80A
Vce on Max Vge Ic--1.75V @ 15V, 10A
Switching Energy--600μJ (on), 5mJ (off)
Gate Charge--33nC
Td on off 25°C--700ns/1.2μs
Test Condition--480V, 10A, 1 kOhm, 15V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGP10NB60SD IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
STGP10NB60S IGBT Transistors N-Ch 600 Volt 10 Amp
STGP10NB60S IGBT 600V 29A 80W TO220
STGP10NB60SD IGBT 600V 29A 80W TO220
STGP10NB60SFP IGBT 600V 23A 25W TO220
STGP10NB60SDFP New and Original
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