STGP7N

STGP7NB60KD vs STGP7NC60H vs STGP7NB60HD

 
PartNumberSTGP7NB60KDSTGP7NC60HSTGP7NB60HD
DescriptionIGBT Transistors N-Ch 600 Volt 7 AmpIGBT Transistors V-FAST POWERMESHIGBT 600V 14A 80W TO220
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation80 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGP7NB60KDPowerMESH-
PackagingTubeTube-
Continuous Collector Current Ic Max14 A--
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.211644 oz--
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220AB-
Power Max-80W-
Reverse Recovery Time trr---
Current Collector Ic Max-25A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-50A-
Vce on Max Vge Ic-2.5V @ 15V, 7A-
Switching Energy-95μJ (on), 115μJ (off)-
Gate Charge-35nC-
Td on off 25°C-18.5ns/72ns-
Test Condition-390V, 7A, 10 Ohm, 15V-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGP7NC60HD IGBT Transistors IGBT
STGP7NB60KD IGBT Transistors N-Ch 600 Volt 7 Amp
STGP7NC60H IGBT Transistors V-FAST POWERMESH
STGP7NC60HD IGBT 600V 25A 80W TO220
STGP7NB60HD IGBT 600V 14A 80W TO220
STGP7NB60KD IGBT 600V 14A 80W TO220
STGP7NB60KD GP7NB60KD New and Original
STGP7NB60F New and Original
STGP7NB60H IGBT Transistors
STGP7NB60HDFP New and Original
STGP7NB60K New and Original
STGP7NB60KDFP New and Original
STGP7NC60HD,GP7NC60HD New and Original
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