STGP8

STGP8M120DF3 vs STGP8NC60KD vs STGP8NC60K

 
PartNumberSTGP8M120DF3STGP8NC60KDSTGP8NC60K
DescriptionIGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 packageIGBT Transistors N Ch 500V 0.21 15A Pwr MOSFETIGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
TechnologySiSiSi
Package / CaseTO-220-3TO-220-3TO-220-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1.2 kV600 V600 V
Collector Emitter Saturation Voltage1.85 V--
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C16 A--
Pd Power Dissipation167 W--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
SeriesSTGP8M120DF3STGP8NC60KDSTGP8NC60K
Continuous Collector Current Ic Max8 A7 A15 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 uA--
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity100010001000
SubcategoryIGBTsIGBTsIGBTs
RoHS-YY
Packaging-TubeTube
Height-9.15 mm9.15 mm
Length-10.4 mm10.4 mm
Width-4.6 mm4.6 mm
Unit Weight-0.211644 oz0.211644 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGP8M120DF3 IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
STGP8NC60KD IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET
STGP8NC60K IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
STGP8NC60K IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
STGP8NC60KD IGBT 600V 15A 65W TO220
STGP8NC60KD,GP8NC60KD New and Original
STGP8NC60KD,GP8NC60KD,ST New and Original
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