PartNumber | STGP8M120DF3 | STGP8NC60KD | STGP8NC60K |
Description | IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package | IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET | IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Technology | Si | Si | Si |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.85 V | - | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 16 A | - | - |
Pd Power Dissipation | 167 W | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Series | STGP8M120DF3 | STGP8NC60KD | STGP8NC60K |
Continuous Collector Current Ic Max | 8 A | 7 A | 15 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 uA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
RoHS | - | Y | Y |
Packaging | - | Tube | Tube |
Height | - | 9.15 mm | 9.15 mm |
Length | - | 10.4 mm | 10.4 mm |
Width | - | 4.6 mm | 4.6 mm |
Unit Weight | - | 0.211644 oz | 0.211644 oz |