PartNumber | STGW15H120DF2 | STGW10M65DF2 | STGW15H120F2 |
Description | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed | IGBT Transistors PTD HIGH VOLTAGE | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1200 V | 650 V | 1200 V |
Collector Emitter Saturation Voltage | 2.1 V | 1.55 V | 2.1 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 30 A | 20 A | 30 A |
Pd Power Dissipation | 259 W | 115 W | 259 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | STGW15H120DF2 | STGW10M65DF2 | STGW15H120F2 |
Packaging | Tube | - | Tube |
Continuous Collector Current Ic Max | 15 A | 20 A | 15 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | 250 uA | 250 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 1.340411 oz | 0.211644 oz | 1.340411 oz |