STGW15M120DF3

STGW15M120DF3
Mfr. #:
STGW15M120DF3
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Lifecycle:
New from this manufacturer.
Datasheet:
STGW15M120DF3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGW15M120DF3 more Information STGW15M120DF3 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.85 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
30 A
Pd - Power Dissipation:
283 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGW15M120DF3
Packaging:
Tube
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
250 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
600
Subcategory:
IGBTs
Unit Weight:
1.340411 oz
Tags
STGW15, STGW1, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
Part # Mfg. Description Stock Price
STGW15M120DF3
DISTI # 497-15057-5-ND
STMicroelectronicsIGBT 1200V 30A 259W
RoHS: Compliant
Min Qty: 600
Container: Tube
Temporarily Out of Stock
  • 600:$5.0890
STGW15M120DF3
DISTI # STGW15M120DF3
STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW15M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 600:$4.0900
  • 1200:$3.9900
  • 2400:$3.7900
  • 3600:$3.5900
  • 6000:$3.4900
STGW15M120DF3
DISTI # STGW15M120DF3
STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGW15M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 30:€3.0700
STGW15M120DF3
DISTI # 26Y5812
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$3.5000
STGW15M120DF3
DISTI # 511-STGW15M120DF3
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
RoHS: Compliant
0
  • 1:$6.6600
  • 10:$6.0200
  • 25:$5.7400
  • 100:$4.9800
  • 250:$4.7600
  • 500:$4.3400
  • 1000:$3.7800
STGW15M120DF3STMicroelectronicsInsulated Gate Bipolar Transistor
RoHS: Compliant
Europe - 600
    STGW15M120DF3
    DISTI # STGW15M120DF3
    STMicroelectronics1200V 30A 259W TO247
    RoHS: Not Compliant
    50
    • 5:€4.1200
    • 30:€3.7200
    • 120:€3.5200
    • 300:€3.3900
    STGW15M120DF3
    DISTI # IGBT1558
    STMicroelectronicsIGBT 1200V 15A 1,85VTO-247Stock DE - 5Stock HK - 0Stock US - 0
    • 30:$4.8200
    • 60:$4.5100
    • 90:$4.4400
    • 150:$4.3700
    • 210:$4.1100
    STGW15M120DF3
    DISTI # 2470024
    STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant
    0
    • 2500:$5.4900
    • 1000:$5.7000
    • 500:$6.5400
    • 250:$7.1700
    • 100:$7.5000
    • 25:$8.6500
    • 10:$9.0700
    • 1:$10.0400
    STGW15M120DF3
    DISTI # 2470024
    STMicroelectronicsIGBT, SINGLE, 1.2KV, 30A, TO-247-3
    RoHS: Compliant
    0
    • 100:£3.8100
    • 50:£4.1000
    • 10:£4.3900
    • 5:£5.0800
    • 1:£5.5800
    Image Part # Description
    STGW15M120DF3

    Mfr.#: STGW15M120DF3

    OMO.#: OMO-STGW15M120DF3

    IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
    STGW15H120DF2

    Mfr.#: STGW15H120DF2

    OMO.#: OMO-STGW15H120DF2

    IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGW15H120F2

    Mfr.#: STGW15H120F2

    OMO.#: OMO-STGW15H120F2

    IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    STGW15S120DF3

    Mfr.#: STGW15S120DF3

    OMO.#: OMO-STGW15S120DF3

    IGBT Transistors IGBT & Power Bipolar
    STGW15M120DF3

    Mfr.#: STGW15M120DF3

    OMO.#: OMO-STGW15M120DF3-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW15H120F2

    Mfr.#: STGW15H120F2

    OMO.#: OMO-STGW15H120F2-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW15H120DF2

    Mfr.#: STGW15H120DF2

    OMO.#: OMO-STGW15H120DF2-STMICROELECTRONICS

    IGBT H-SERIES 1200V 15A TO-247
    Availability
    Stock:
    100
    On Order:
    2083
    Enter Quantity:
    Current price of STGW15M120DF3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $6.66
    $6.66
    10
    $6.02
    $60.20
    25
    $5.74
    $143.50
    100
    $4.98
    $498.00
    250
    $4.76
    $1 190.00
    500
    $4.34
    $2 170.00
    1000
    $3.78
    $3 780.00
    2500
    $3.64
    $9 100.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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