 |  | | |
| PartNumber | STGW10M65DF2 | STGW100N30 | STGW100N30D |
| Description | IGBT Transistors PTD HIGH VOLTAGE | ||
| Manufacturer | STMicroelectronics | ST | - |
| Product Category | IGBT Transistors | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.55 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 20 A | - | - |
| Pd Power Dissipation | 115 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | STGW10M65DF2 | - | - |
| Continuous Collector Current Ic Max | 20 A | - | - |
| Brand | STMicroelectronics | - | - |
| Gate Emitter Leakage Current | 250 uA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 600 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STGW10M65DF2 | IGBT Transistors PTD HIGH VOLTAGE | |
| STGW10M65DF2 | TRENCH GATE FIELD-STOP IGBT M SE | ||
| STGW100N30 | New and Original | ||
| STGW100N30D | New and Original |