STGW30NC60W

STGW30NC60WD vs STGW30NC60W GW30NC60W vs STGW30NC60W

 
PartNumberSTGW30NC60WDSTGW30NC60W GW30NC60WSTGW30NC60W
DescriptionIGBT Transistors PowerMESH&#34 IGBTIGBT 600V 60A 200W TO220
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGW30NC60WD-PowerMESH
PackagingTube-Tube
Continuous Collector Current Ic Max60 A--
Height20.15 mm--
Length15.75 mm--
Width5.15 mm--
BrandSTMicroelectronics--
Continuous Collector Current30 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity600--
SubcategoryIGBTs--
Unit Weight1.340411 oz--
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247-3
Power Max--200W
Reverse Recovery Time trr---
Current Collector Ic Max--60A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--150A
Vce on Max Vge Ic--2.5V @ 15V, 20A
Switching Energy--305μJ (on), 181μJ (off)
Gate Charge--102nC
Td on off 25°C--29.5ns/118ns
Test Condition--390V, 20A, 10 Ohm, 15V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGW30NC60WD IGBT Transistors PowerMESH&#34 IGBT
STGW30NC60WD IGBT 600V 60A 200W TO247
STGW30NC60W IGBT 600V 60A 200W TO220
STGW30NC60W GW30NC60W New and Original
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