STGW30NC60WD

Mfr. #:: STGW30NC60WD
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors PowerMESH&#34 IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: STGW30NC60WD Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STGW30NC60WD more Information STGW30NC60WD Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.1 V

Maximum Gate Emitter Voltage:: 20 V

Pd - Power Dissipation:: 200 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: STGW30NC60WD

Packaging:: Tube

Continuous Collector Current Ic Max:: 60 A

Height:: 20.15 mm

Length:: 15.75 mm

Width:: 5.15 mm

Brand:: STMicroelectronics

Continuous Collector Current:: 30 A

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 600

Subcategory:: IGBTs

Unit Weight:: 1.340411 oz

Tags: STGW30NC60W, STGW30NC6, STGW30NC, STGW30N, STGW30, STGW3, STGW, STG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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STGW30NC60WD Description

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT

***nell: IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te

***(Formerly Allied Electronics): STGW30NC60WD,IGBT Ultrafast 600V 30A

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ical: Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

*** Electronics: STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp

***(Formerly Allied Electronics): Transistor IGBT N-Ch 600V 60A TO247

***nell: IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ical: Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail

***eco: 600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode

***ure Electronics: HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247

***rchild Semiconductor: The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

***ical: Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3

***nell: IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins

***et: Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail

***ark: Single Igbt, 600V, 54A; Continuous Collector Current:54A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Onsemi HGTG12N60A4

***rchild Semiconductor: The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

***ow.cn: Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ment14 APAC: IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

Market price

Part #	Mfg.	Description	Stock	Price
STGW30NC60WD DISTI # 32694828	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	1850	500:$2.6235 250:$2.9304 100:$3.0888 10:$3.5640
STGW30NC60WD DISTI # 497-5204-5-ND	STMicroelectronics	IGBT 600V 60A 200W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	519In Stock	2520:$2.2344 510:$2.7818 120:$3.2678 30:$3.7707 10:$3.9880 1:$4.4400
STGW30NC60WD DISTI # V36:1790_06560752	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW30NC60WD DISTI # STGW30NC60WD	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW30NC60WD) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 750	1000:€2.1200 500:€2.1600 250:€2.4400 100:€2.5700 10:€2.6900 1:€3.6600
STGW30NC60WD DISTI # STGW30NC60WD	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW30NC60WD) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$2.0383 3600:$2.0808 2400:$2.1774 1200:$2.2800 600:$2.3928
STGW30NC60WD DISTI # 26M3562	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 26M3562) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$3.3200 250:$3.6300 100:$3.7900 50:$3.9500 25:$4.1200 10:$4.2800 1:$4.9100
STGW30NC60WD DISTI # 26M3562	STMicroelectronics	IGBT, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:-RoHS Compliant: Yes	0	500:$3.1800 250:$3.4800 100:$3.6300 50:$3.7900 25:$3.9400 10:$4.1000 1:$4.7100
STGW30NC60WD DISTI # 511-STGW30NC60WD	STMicroelectronics	IGBT Transistors PowerMESH&#34 IGBT RoHS: Compliant	260	1:$4.2300 10:$3.6000 100:$3.1200 250:$2.9600 500:$2.6500 1000:$2.2400 2500:$2.1300
STGW30NC60WD	STMicroelectronics	* FREE SHIPPING ORDERS OVER $100 * INSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AC	1104	338:$1.3680 118:$1.4820 1:$3.4200
STGW30NC60WD DISTI # 7959198P	STMicroelectronics	STGW30NC60WD IGBT ULTRAFAST 600V 30A, TU	228	600:£1.9100 300:£2.1450 90:£2.3750 30:£2.6050
STGW30NC60WD DISTI # 7959198	STMicroelectronics	STGW30NC60WD IGBT ULTRAFAST 600V 30A, PK	100	600:£1.9100 300:£2.1450 90:£2.3750 30:£2.6050 2:£3.2750
STGW30NC60WD	STMicroelectronics		746
STGW30NC60WD DISTI # STGW30NC60WD	STMicroelectronics	Transistor: IGBT,600V,30A,200W,TO247-3	101	1:$3.6100 3:$3.2600 10:$2.6600 30:$2.3100
STGW30NC60WD DISTI # 1293659	STMicroelectronics	IGBT, TO-247 RoHS: Compliant	118	5000:$3.1600 2500:$3.2800 1000:$3.4500 500:$4.0700 250:$4.5500 100:$4.8000 10:$5.5400 1:$6.5000
STGW30NC60WD DISTI # 1293659	STMicroelectronics	IGBT, TO-247	148	500:£2.1000 250:£2.3500 100:£2.4800 10:£2.8500 1:£3.7400
STGW30NC60WD DISTI # XSKDRABS0032153	STMicroelectronics	RoHS: Compliant	360 in Stock0 on Order	360:$2.4240 330:$2.5920
STGW30NC60WD	STMicroelectronics	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	Europe - 60
STGW30NC60WD DISTI # IGBT1369	STMicroelectronics	IGBT600V60A2.1VTO247-3	Stock DE - 420Stock HK - 0Stock US - 0	30:$2.2800 60:$2.1400 120:$2.1100 180:$2.0700 300:$1.9500
STGW30NC60WD DISTI # STGW30NC60WD	STMicroelectronics	600V 60A 200W TO247 RoHS: Compliant	75	5:€2.7000 30:€2.3000 120:€2.1000 300:€2.0000

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	Mfr.#: VS-65EPS16LHM3 OMO.#: OMO-VS-65EPS16LHM3	Rectifiers 65A If; 1600V Vr TO-247AD 2L
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	Mfr.#: IRFB4227PBF OMO.#: OMO-IRFB4227PBF	MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
	Mfr.#: STGW35HF60W OMO.#: OMO-STGW35HF60W-STMICROELECTRONICS	IGBT Transistors Ultra Fast IGBT 35A 600V
	Mfr.#: VS-65EPS16LHM3 OMO.#: OMO-VS-65EPS16LHM3-VISHAY	DIODES - TO-247-E3
	Mfr.#: CRCW0603680KFKEAC OMO.#: OMO-CRCW0603680KFKEAC-VISHAY-DALE	D11/CRCW0603-C 100 680K 1% ET1
	Mfr.#: B43545B9227M000 OMO.#: OMO-B43545B9227M000-EPCOS	400V 220UF ALUMINIUM SNAP IN CAPACITOR, BX
	Mfr.#: CRCW060333R0FKEAC OMO.#: OMO-CRCW060333R0FKEAC-VISHAY-DALE	D11/CRCW0603-C 100 33R 1% ET1

STGW30NC60WD

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes