PartNumber | STGW40V60DF | STGW40V60DF GW40V60DF | STGW40V60DF,STGWT40V60DF |
Description | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | ||
Manufacturer | STMicroelectronics | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2.35 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 80 A | - | - |
Pd Power Dissipation | 283 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | STGW40V60DF | - | - |
Packaging | Tube | - | - |
Brand | STMicroelectronics | - | - |
Gate Emitter Leakage Current | 250 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 600 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.229281 oz | - | - |