STGW40V60DF

STGW40V60DF vs STGW40V60DF GW40V60DF vs STGW40V60DF,STGWT40V60DF

 
PartNumberSTGW40V60DFSTGW40V60DF GW40V60DFSTGW40V60DF,STGWT40V60DF
DescriptionIGBT Transistors 600V 40A High Speed Trench Gate IGBT
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.35 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation283 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesSTGW40V60DF--
PackagingTube--
BrandSTMicroelectronics--
Gate Emitter Leakage Current250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity600--
SubcategoryIGBTs--
Unit Weight0.229281 oz--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGW40V60DF IGBT Transistors 600V 40A High Speed Trench Gate IGBT
STGW40V60DF IGBT 600V 80A 283W TO247
STGW40V60DF GW40V60DF New and Original
STGW40V60DF,STGWT40V60DF New and Original
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