STGWT8

STGWT80H65DFB vs STGWT80V60DF vs STGWT80H65FB

 
PartNumberSTGWT80H65DFBSTGWT80V60DFSTGWT80H65FB
DescriptionIGBT Transistors Trench gate H series 650V 80A HiSpdIGBT Transistors Trench gte FieldStop IGBT 600V 80AIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-3PTO-3PTO-3P
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V650 V
Collector Emitter Saturation Voltage1.6 V1.85 V1.6 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C120 A120 A120 A
Pd Power Dissipation469 W469 W469 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesSTGWT80H65DFBSTGWT80V60DFSTGWT80H65FB
PackagingTubeTubeTube
Continuous Collector Current Ic Max80 A80 A80 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA250 nA250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity300300300
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.238311 oz0.238311 oz0.238311 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGWT80H65DFB IGBT Transistors Trench gate H series 650V 80A HiSpd
STGWT80V60F IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
STGWT80V60DF IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65FB IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWT80V60DF IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65DFB IGBT 650V 120A 469W TO3P-3L
STGWT80V60F IGBT Transistors IGBT & Power Bipola
STGWT80H65FB IGBT Transistors IGBT & Power Bipola
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