STGWT80H65DFB

Mfr. #:: STGWT80H65DFB
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors Trench gate H series 650V 80A HiSpd
Lifecycle:: New from this manufacturer.
Datasheet:: STGWT80H65DFB Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: STGWT80H65DFB more Information STGWT80H65DFB Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-3P

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.6 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 120 A

Pd - Power Dissipation:: 469 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Series:: STGWT80H65DFB

Packaging:: Tube

Continuous Collector Current Ic Max:: 80 A

Brand:: STMicroelectronics

Gate-Emitter Leakage Current:: 250 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 300

Subcategory:: IGBTs

Unit Weight:: 0.238311 oz

Tags: STGWT8, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT80H65DFB Description

***ure Electronics: HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P

***ical: Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube

***va Crawler: Trench gate field-stop 650 V, 80 A high speed HB series IGBT

***Components: In a Tube of 30, STMicroelectronics STGWT80H65DFB IGBT

***p One Stop Global: Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube

***et Europe: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube

***ied Electronics & Automation: IGBT Trench HB Series 650V 80A TO-3P

***nell: IGBT, SINGLE, 650V, 120A, TO-3P

***i-Key: IGBT 650V 120A 469W TO3P-3L

***ark: IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes

STGWT80H65DFB More Information

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

Part #	Mfg.	Description	Stock	Price
STGWT80H65DFB DISTI # 32924310	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	300	200:$3.7485 50:$3.9780 10:$4.1182 3:$9.0780
STGWT80H65DFB DISTI # 497-14234-5-ND	STMicroelectronics	IGBT 650V 120A 469W TO3P-3L RoHS: Compliant Min Qty: 1 Container: Tube	8In Stock	510:$4.8825 120:$5.6070 30:$6.4577 10:$6.7730 1:$7.5000
STGWT80H65DFB DISTI # STGWT80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€3.4900 500:€3.6900 100:€3.8900 50:€3.9900 25:€4.1900 10:€4.3900 1:€4.7900
STGWT80H65DFB DISTI # STGWT80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65DFB) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	3000:$3.7900 1800:$3.8900 1200:$3.9900 600:$4.1900 300:$4.3900
STGWT80H65DFB DISTI # 45AC7598	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-3P,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	71	250:$5.1500 100:$5.3900 50:$5.8000 25:$6.2100 10:$6.5100 1:$7.2000
STGWT80H65DFB DISTI # 511-STGWT80H65DFB	STMicroelectronics	IGBT Transistors Trench gate H series 650V 80A HiSpd RoHS: Compliant	193	1:$7.1300 10:$6.4500 25:$6.1500 100:$5.3400 250:$5.1000
STGWT80H65DFB DISTI # 8297136P	STMicroelectronics	IGBT TRENCH HB SERIES 650V 80A TO-3P, TU	184	10:£2.9500
STGWT80H65DFB DISTI # 2807181	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-3P RoHS: Compliant	222	1020:$6.4500 510:$7.4100 120:$8.5000 30:$9.7900 1:$11.3700
STGWT80H65DFB DISTI # 2807181	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-3P	222	100:£3.9100 50:£4.2100 10:£4.5000 5:£5.2200 1:£5.7200

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Availability

Stock:: 183
On Order:: 2166
Enter Quantity:

Current price of STGWT80H65DFB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$7.13~~; ~~$7.13~~

10: ~~$6.45~~; ~~$64.50~~

25: ~~$6.15~~; ~~$153.75~~

100: ~~$5.34~~; ~~$534.00~~

250: ~~$5.10~~; ~~$1 275.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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STGWT80H65DFB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes