STH41

STH410N4F7-2AG vs STH410N4F7-6AG vs STH4145

 
PartNumberSTH410N4F7-2AGSTH410N4F7-6AGSTH4145
DescriptionMOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 packageMOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseH2PAK-2H2PAK-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current200 A200 A-
Rds On Drain Source Resistance1.1 mOhms1.1 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge120 nC120 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation365 W365 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameSTripFETSTripFET-
PackagingReelReel-
SeriesSTH410N4F7-2AGSTH410N4F7-6AG-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Forward Transconductance Min---
Development Kit---
Fall Time44.2 ns44.2 ns-
Product TypeMOSFETMOSFET-
Rise Time198 ns198 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time108 ns108 ns-
Typical Turn On Delay Time35 ns35 ns-
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STH410N4F7-2AG MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
STH410N4F7-6AG MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
STH410N4F7-2AG MOSFET N-CH 40V H2PAK-2
STH4145 New and Original
STH4156 New and Original
STH4180-6 New and Original
STH41C100-6 New and Original
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