PartNumber | STH410N4F7-2AG | STH410N4F7-6AG | STH4145 |
Description | MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package | MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | H2PAK-2 | H2PAK-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 200 A | 200 A | - |
Rds On Drain Source Resistance | 1.1 mOhms | 1.1 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 120 nC | 120 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 365 W | 365 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | STripFET | STripFET | - |
Packaging | Reel | Reel | - |
Series | STH410N4F7-2AG | STH410N4F7-6AG | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Forward Transconductance Min | - | - | - |
Development Kit | - | - | - |
Fall Time | 44.2 ns | 44.2 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 198 ns | 198 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 108 ns | 108 ns | - |
Typical Turn On Delay Time | 35 ns | 35 ns | - |
Unit Weight | 0.139332 oz | - | - |