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STH410N4F7-6AG

STH410N4F7-6AG
Mfr. #:
STH410N4F7-6AG
Manufacturer:
STMicroelectronics
Description:
MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
Lifecycle:
New from this manufacturer.
Datasheet:
STH410N4F7-6AG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
STH410N4F7-6AG more Information STH410N4F7-6AG Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
H2PAK-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
200 A
Rds On - Drain-Source Resistance:
1.1 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
120 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
365 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
STripFET
Packaging:
Reel
Series:
STH410N4F7-6AG
Transistor Type:
1 N-Channel
Brand:
STMicroelectronics
Forward Transconductance - Min:
-
Development Kit:
-
Fall Time:
44.2 ns
Product Type:
MOSFET
Rise Time:
198 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
108 ns
Typical Turn-On Delay Time:
35 ns
Tags
STH41, STH4, STH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
***ical
Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 40V, 200A, H2PAK-6, Tape and Reel
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET VII Power MOSFETs
Image Part # Description
STH410N4F7-2AG

Mfr.#: STH410N4F7-2AG

OMO.#: OMO-STH410N4F7-2AG

 MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
STH410N4F7-6AG

Mfr.#: STH410N4F7-6AG

OMO.#: OMO-STH410N4F7-6AG

 MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
STH410N4F7-2AG

Mfr.#: STH410N4F7-2AG

OMO.#: OMO-STH410N4F7-2AG-STMICROELECTRONICS

 MOSFET N-CH 40V H2PAK-2
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of STH410N4F7-6AG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.03
$5.03
10
$4.27
$42.70
100
$3.70
$370.00
250
$3.51
$877.50
500
$3.15
$1 575.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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