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STI18N6

STI18N65M2 vs STI18N60M2 vs STI18N65M5

 
PartNumberSTI18N65M2STI18N60M2STI18N65M5
DescriptionMOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 packageMOSFET POWER MOSFETMOSFET N-Ch 650 V 0.198 Ohm 15 A MDmesh(TM) V
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3TO-262-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V-650 V
Id Continuous Drain Current12 A-15 A
Rds On Drain Source Resistance275 mOhms-198 mOhms
Vgs th Gate Source Threshold Voltage2 V-4 V
Vgs Gate Source Voltage25 V-25 V
Qg Gate Charge20 nC-31 nC
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation110 W-110 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameMDmesh--
PackagingTube-Tube
SeriesSTI18N65M2STI18N60M2STI18N65M5
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time12.5 ns-9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time7.5 ns-7 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time46 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.050717 oz0.070548 oz0.050717 oz
Minimum Operating Temperature--- 55 C
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics 		STI18N65M2 MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
STI18N60M2 MOSFET POWER MOSFET
STI18N65M5 MOSFET N-Ch 650 V 0.198 Ohm 15 A MDmesh(TM) V
STI18N65M5 MOSFET N CH 650V 15A I2PAK
STI18N60M2 MOSFET N-CH 600V 9A I2PAK
STI18N65M2 MOSFET N-CH 650V 12A I2PAK
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