STI18N65M5

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

15 A

Rds On - Drain-Source Resistance:

198 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

31 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

110 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

STI18N65M5

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Unit Weight:

0.050717 oz

Tags

STI18N6, STI18N, STI18, STI1, STI