| PartNumber | STLD128DNT4 | STLD125N4F6AG |
| Description | Bipolar Transistors - BJT NPN power transistor | MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | MOSFET |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | PowerFLAT-5x6-8 |
| Transistor Polarity | NPN | N-Channel |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 400 V | - |
| Emitter Base Voltage VEBO | 18 V | - |
| Maximum DC Collector Current | 6 A | - |
| Minimum Operating Temperature | - 65 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C |
| Series | STL128DN | STLD125N4F6AG |
| DC Current Gain hFE Max | 10 | - |
| Height | 2.4 mm | - |
| Length | 6.2 mm | - |
| Packaging | Reel | - |
| Width | 6.6 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 3 A | - |
| DC Collector/Base Gain hfe Min | 8 | - |
| Pd Power Dissipation | 20 W | 130 W |
| Product Type | BJTs - Bipolar Transistors | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | Transistors | MOSFETs |
| Unit Weight | 0.009185 oz | - |
| Technology | - | Si |
| Number of Channels | - | 1 Channel |
| Vds Drain Source Breakdown Voltage | - | 40 V |
| Id Continuous Drain Current | - | 120 A |
| Rds On Drain Source Resistance | - | 2.4 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 91 nC |
| Channel Mode | - | Enhancement |
| Qualification | - | AEC-Q101 |
| Tradename | - | STripFET |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 220 ns |
| Rise Time | - | 300 ns |
| Typical Turn Off Delay Time | - | 255 ns |
| Typical Turn On Delay Time | - | 47 ns |