| PartNumber | STP10NM60N | STP10NM60ND | STP10NM50N |
| Description | MOSFET N-channel 600 V Mdmesh 8A | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR | IGBT Transistors MOSFET N-Ch 500V 0.53 Ohm 7A MDmesh II |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
| Id Continuous Drain Current | 10 A | 8 A | - |
| Rds On Drain Source Resistance | 550 mOhms | 600 mOhms | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 19 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 70 W | 70 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | Tube | - |
| Series | STP10NM60N | STP10NM60ND | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |