PartNumber | STP11N65M2 | STP11N60DM2 | STP11N52K3 |
Description | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package | MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package | IGBT Transistors MOSFET N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w |
Manufacturer | STMicroelectronics | STMicroelectronics | ST |
Product Category | MOSFET | MOSFET | IC Chips |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
Id Continuous Drain Current | 7 A | 10 A | - |
Rds On Drain Source Resistance | 670 mOhms | 370 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Vgs Gate Source Voltage | 25 V | 25 V | - |
Qg Gate Charge | 12.5 nC | 16.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 85 W | 110 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh II Plus | MDmesh | - |
Packaging | Tube | - | - |
Product | Power MOSFET | - | - |
Series | STP11N65M2 | STP11N60DM2 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 15 ns | 9.5 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.5 ns | 6.3 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 26 ns | 31 ns | - |
Typical Turn On Delay Time | 9.5 ns | 11.7 ns | - |
Unit Weight | 0.011640 oz | 0.067021 oz | - |
Channel Mode | - | Enhancement | - |