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| PartNumber | STP16N65M5 | STP16N65M2 |
| Description | MOSFET N-Ch 650 Volt 12 Amp | MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 12 A | 11 A |
| Rds On Drain Source Resistance | 299 mOhms | 360 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 90 W | 110 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | MDmesh | - |
| Packaging | Tube | Tube |
| Height | 9.15 mm | - |
| Length | 10.4 mm | - |
| Series | STP16N65M5 | STP16N65M2 |
| Transistor Type | 1 N-Channel | - |
| Width | 4.6 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 7 ns | 11.3 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | 8.2 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 36 ns |
| Typical Turn On Delay Time | 25 ns | 11.3 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V |
| Qg Gate Charge | - | 19.5 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STP16N65M5 | MOSFET N-Ch 650 Volt 12 Amp | |
| STP16N65M2 | MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package | ||
| STP16N65M2 | IGBT Transistors MOSFET POWER MOSFET | ||
| STP16N65M5 | MOSFET N-CH 650V 12A TO-220 | ||
| STP16N65M5,16N65M5 | New and Original |